Hydride vapor phase epitaxy of GaN on self-organized patterned graphene masks

Author:

Zhao Zhi-De,Wang Bin,Xu Wei,Zhang Hao-Ran,Chen Zhi-Ying,Yu Guang-Hui

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Separation of laterally overgrown GaN template by using selective electrochemical etching;Jeon;J Alloy Compd,2012

2. Hydrogen etching of GaN and its application to produce free-standing GaN thick films;Yeh;J Cryst Growth,2011

3. Selective growth of (001) GaAs using a patterned graphene mask;Yujirou;J Cryst Growth,2014

4. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene;Kim;Nat Commun,2014

5. Microstructural defects in GaN thin films grown on chemically vapor deposited graphene layers;Yoo;Appl Phys Lett,2013

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1. Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth;Crystal Growth & Design;2023-06-28

2. Influence of patterned graphene mask on nucleation behavior of GaN by MOCVD;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

3. Epitaxial lateral overgrowth of GaN using hexagonal patterned PECVD and wet transferred graphene masks by MOCVD;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

4. Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates;Advanced Optical Materials;2022-09-30

5. Remote epitaxy;Nature Reviews Methods Primers;2022-06-01

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