Phase change material Ge2Sb1.5Bi0.5Te5 possessed of both positive and negative photoresist characteristics
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Glasses for lithography
2. Nanosize fabrication using etching of phase-change recording films
3. Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application
4. Reversible Electrical Switching Phenomena in Disordered Structures
5. Ultra-high-density phase-change storage and memory
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