Silicide formation during reaction between Ni ultra-thin films and Si(001) substrates-Reference-Cited by-同舟云学术

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Silicide formation during reaction between Ni ultra-thin films and Si(001) substrates

Published:2014-02 Issue: Volume:116 Page:139-142
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Fouet J.,Texier M.,Richard M.-I.,Portavoce A.,Mangelinck D.,Guichet C.,Boudet N.,Thomas O.

Funder

French National Agency (ANR)

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

2. Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

3. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

4. In situ real-time studies of nickel silicide phase formation

5. Template Structure at the Silicon/Amorphous-Silicide Interface

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process;Applied Surface Science;2023-09

2. Evolution of the Ni0.9Pt0.1/Si system under annealing via nano-crystalline textured phases;Journal of Applied Physics;2023-07-19

3. Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches;Beilstein Journal of Nanotechnology;2023-01-20

4. Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms;Microelectronic Engineering;2021-05

5. Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi;Coatings;2019-05-28

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