Low temperature deposition of Ga2O3 films on sapphire and epi-GaN substrates-Reference-Cited by-同舟云学术

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Low temperature deposition of Ga2O3 films on sapphire and epi-GaN substrates

Published:2022-02 Issue: Volume:308 Page:131266
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Zhang Tao,Cheng Qian,Hu Zhiguo,Li Yifan,Ma Jinbang,Yao Yixin,Zuo Yan,Feng Qian,Zhang Yachao,Zhou Hong,Ning Jing,Zhang Chunfu,Zhang Jincheng,Hao Yue

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Investigation of defect structure in homoepitaxial (2¯01) β-Ga2O3 layers prepared by plasma-assisted molecular beam epitaxy

2. Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition

3. Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering

4. Influence of growth temperature on the characteristics of β-Ga2O3 epitaxial films and related solar-blind photodetectors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An experimental investigation of sapphire grinding by porous and vitrified M0.5/1.5 diamond grinding wheel;Tribology International;2023-07

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