Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation-Reference-Cited by-同舟云学术

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Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation

Published:2022-03 Issue: Volume:310 Page:131494
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Okulich E.V.,Okulich V.I.,Tetelbaum D.I.,Mikhaylov A.N.

Funder

Government Council on Grants, Russian Federation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications;Kim;Solid-State Electron.,2015

2. Resistive Switching Effect of the Structure Based on Silicon Nitride;Komarov;Tech. Phys.,2021

3. Silicon Oxide (SiOx): A Promising Material for Resistance Switching?;Mehonic;Adv. Mater.,2018

4. Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure;Kim;J. Vac. Sci. Technol.,2015

5. Impact of Oxygen Vacancies on the Formation and Structure of Filaments in SiO2-Based Memristors;Okulich;Tech. Phys. Lett.,2020

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