Influences of vacuum annealing induced oxygen defects on the transfer characteristics of a-ITO thin-film transistors
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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3. Nanometre-thin indium tin oxide for advanced high-performance electronics
4. Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation
5. Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
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1. Effect of vacuum annealing on indium tin oxide transistor with nanometer-thin channel;Vacuum;2024-04
2. Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes;Physica Scripta;2023-11-02
3. Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD;Journal of Alloys and Compounds;2023-10
4. High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters;Applied Surface Science;2023-03
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