Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition

Published:2007-01 Issue:2 Volume:61 Page:516-519
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Wang H.,Huang Y.,Sun Q.,Chen J.,Zhu J.J.,Wang L.L.,Wang Y.T.,Yang H.,Wu M.F.,Qu Y.H.,Jiang D.S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Optical bandgap energy of wurtzite InN

3. Mie Resonances, Infrared Emission, and the Band Gap of InN

4. TEM characterization of InN films grown by RF‐MBE

5. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A green, low-cost method to prepare GaN films by plasma enhanced chemical vapor deposition;Thin Solid Films;2020-09

2. TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-Gan Nucleation Layer;Applied Mechanics and Materials;2012-11

3. The characterization and properties of InN grown by MOCVD;The European Physical Journal Applied Physics;2008-10-04

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