TEM characterization of InN films grown by RF‐MBE
Author:
Affiliation:
1. Department of Photonics, Ritsumeikan University, 1‐1‐1 Noji‐higashi, Kusatsu, 525‐8577 Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303274
Reference9 articles.
1. H.Lu W. J.Schaff L. F.Eastmanl J.Wu W.Walukiewicz D. C.Look andR. J.Molnar 2002 MRS Fall Meeting Proc. L4.10 (2002).
2. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
3. Optical bandgap energy of wurtzite InN
4. Unusual properties of the fundamental band gap of InN
5. Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE
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