Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer-Reference-Cited by-同舟云学术

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Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Published:2021-07 Issue: Volume:294 Page:129783
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Zhao Ying,Xu Shengrui,Peng Ruoshi,Du Jinjuan,Fan Xiaomeng,Tao Hongchang,Zhang Jincheng,Zhang Jinfeng,Feng Lansheng,Hao Yue

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Observation of space-charge-limited current in AlGaN/GaN ultraviolet light-emitting diodes

2. Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template

3. Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes

4. High-Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

5. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO_2 photonic crystals

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN;Journal of Alloys and Compounds;2024-01

2. Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency;Crystals;2023-11-23

3. Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device;ACS Applied Materials & Interfaces;2023-06-22

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