Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO_2 photonic crystals-Reference-Cited by-同舟云学术

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Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO_2 photonic crystals

Published:2014-06-02 Issue:S4 Volume:22 Page:A1093
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Wei Tongbo,Huo Ziqiang,Zhang Yonghui,Zheng Haiyang,Chen Yu,Yang Jiankun,Hu Qiang,Duan Ruifei,Wang Junxi,Zeng Yiping,Li Jinmin

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference22 articles.

1. Defect related issues in the “current roll-off” in InGaN based light emitting diodes

2. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

3. Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates

4. Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates

5. Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates

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3. Investigation of InGaN-Based Green Micro-Photonic-Crystal- Light-Emitting-Diodes with Bottom, Nanoporous, Distributed Bragg Reflectors;Photonics;2022-12-05

4. Ultra High Luminous Efficiency p-Type Surface Defect Structure GaN LED;Nano;2022-11

5. The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate;Materials Science in Semiconductor Processing;2022-06

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