Electro-optical modulation on resistive switching behavior in Ag/BaTiO3/LaNiO3 device-Reference-Cited by-同舟云学术

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Electro-optical modulation on resistive switching behavior in Ag/BaTiO3/LaNiO3 device

Published:2021-06 Issue: Volume:293 Page:129658
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Zheng Rongxu,Wu Lei,Li Juanfei,Wang Xiaoqiang,Li Mingya,Wei Junfang,Li Jinsheng

Funder

Hebei Provincial Natural Science Foundation

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Resistance random access memory;Chang;Mater. Today,2016

2. Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering;Jung;Thin Solid Films,2011

3. Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer;Ma;Appl. Phys. Lett.,2013

4. High-performance programmable memory devices based on co-doped BaTiO3;Yan;Adv. Mater.,2011

5. Resistance switching and white-light photovoltaic effects in BiFeO3/Nb–SrTiO3 heterojunctions;Qu;Appl. Phys. Lett.,2011

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis of LaXO3 (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices;Electronics;2023-10-04

2. Rare earth halide double perovskites for high-performance resistive random access memory;Journal of Materials Chemistry C;2023

3. A Flexible Memristor Model With Electronic Resistive Switching Memory Behavior and Its Application in Spiking Neural Network;IEEE Transactions on NanoBioscience;2023-01

4. Synthesis of hexagonal boron nitride thin film on Pt substrates for resistive switching memory applications;Current Applied Physics;2022-12

5. Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions;Applied Surface Science;2022-02

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