Rare earth halide double perovskites for high-performance resistive random access memory-Reference-Cited by-同舟云学术

Rare earth halide double perovskites for high-performance resistive random access memory

Published:2023 Issue:14 Volume:11 Page:4946-4952
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tong Tong¹,Liu Chang²,Xu Jing²,Min Huihua³,Chen Su⁴^ORCID,Lyu Yinong²,Lyu Chongguang²^ORCID

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China

2. The State Key Laboratory of Materials-Oriented Chemical Engineering, College of Materials Science and Engineering, Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, Nanjing, 210009, China

3. Electron Microscope Laboratory, Nanjing Forestry University, Nanjing 210037, China

4. State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials, Nanjing Tech University Nanjing, 210009, China

Abstract

We report the resistive memory devices based on rare earth halide double perovskite Cs2AgEuBr6 films which demonstrate a typical random-access memory (ReRAM) behavior with high ON/OFF ratio and long retention time.

Funder

Priority Academic Program Development of Jiangsu Higher Education Institutions

Jiangsu Province Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00350G

Reference41 articles.

1. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

2. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing