Microwave plasma enhanced CVD of aluminum oxide films: OES diagnostics and influence of the RF bias-Reference-Cited by-同舟云学术

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Microwave plasma enhanced CVD of aluminum oxide films: OES diagnostics and influence of the RF bias

Published:2001-06 Issue:1-2 Volume:390 Page:51-58
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tristant P.,Ding Z.,Trang Vinh Q.B.,Hidalgo H.,Jauberteau J.L.,Desmaison J.,Dong C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Properties of aluminium oxide films prepared by plasma-enhanced metal-organic chemical vapour deposition

2. Plasma enhanced metal‐organic chemical vapor deposition of aluminum oxide dielectric film for device applications

3. Compositional and structural analysis of aluminum oxide films prepared by plasma-enhanced chemical vapor deposition

4. Preparation and characterization of aluminum oxide films by plasma enhanced chemical vapor deposition

5. Effect of Oxygen Radicals for Epitaxial Growth ofAl2O3on Si

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