Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces-Reference-Cited by-同舟云学术

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Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces

Published:1998-12 Issue:1-2 Volume:336 Page:381-385
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Pagès O.,Erguig H.,Wagner V.,Zaoui A.,Laurenti J.P.,Gueurts J.,Aourag H.,Aulombard R.L.,Certier M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy

2. Band bendings, band offsets, and interface instabilities inp+-GaAs/n−-ZnSe heterojunctions

3. Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering

4. Electric-Field-Induced Raman Scattering in SrTiO3and KTaO3

5. Raman Scattering from InSb Surfaces at Photon Energies Near theE1Energy Gap

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties;physica status solidi (b);2014-04-03

2. Raman study of nitrogen-doped ZnSSe/GaAs epilayers;Thin Solid Films;2003-03

3. Study of semiconductor surfaces and interfaces using electromodulation;Surface and Interface Analysis;2001

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