Silicon MIS structures using samarium oxide films-Reference-Cited by-同舟云学术

Silicon MIS structures using samarium oxide films

Published:1998-07 Issue:1-2 Volume:325 Page:151-155
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Rozhkov V.A,Trusova A.Yu,Berezhnoy I.G

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. V.A. Rozhkov, A.I. Petrov, V.P. Goncharov, A.Yu Trusova, Proc. IEEE 5th Int. Conf. on Conduction and Breakdown in Solid Dielectrics, Leicester, 1995, p. 418.

2. V.A. Rozhkov, V.P. Goncharov, A.Yu. Trusova, Proc. IEEE 5th Int. Conf. on Conduction and Breakdown in Solid Dielectrics, Leicester, 1995, p. 552.

3. A comparative study of thin film transistors using rare earth oxides as gates

4. V.A. Rozhkov, A.I. Petrov, Pisma v Zhurnal Tekhnicheskoy Phisiki 11 (1) (1985) 49 (in Russian).

5. V.A. Rozhkov, V.P. Goncharov, A.Yu. Trusova. Pisma v Zhurnal Tekhnicheskoy Phisiki 21 (2) (1995) 6 (in Russian).

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