Effect of r.f. hydrogen plasma annealing on the properties of Si/SiO2 interface: a spectroscopic ellipsometry study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. R.F. plasma annealing of as-grown defects in the Si/SiO2 system
2. Low-temperature treatment of Si/SiO2 structures in an RF hydrogen plasma
3. Low-Temperature RF Plasma Treatment of SiSiO2 Structures as a Substitution for High-Temperature Anneals
4. Mobile ions in thermal SiO2 on r.f. plasma annealing
5. Ellipsometric approach for determination of the pseudodielectric function of the Si–interface in the Si–SiO2 structure
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1. Cathodoluminescence study of off-stoichiometry and residual stresses in advanced dielectrics and related devices;physica status solidi (a);2011-03-10
2. High-resolution stress assessments of interconnect/dielectric electronic patterns using optically active point defects of silica glass as a stress sensor;Journal of Applied Physics;2007-05
3. Investigation of nanocrystalline Epi-Si/γ-Al2O3 heterostructure deposited on Si substrate by spectroscopic ellipsometry;Thin Solid Films;2006-06
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