The band structure of ALCVD AlZr- and AlHf-oxides as measured by XPS-Reference-Cited by-同舟云学术

The band structure of ALCVD AlZr- and AlHf-oxides as measured by XPS

Published:2004-06 Issue:1-3 Volume:109 Page:56-59
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Pétry J,Vandervorst W,Conard T

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS

2. Outlook of MOS devices into next century

3. S.J. Lee, H.F. Luan, C.H. Lee, T.S. Jeon, W.P. Bai, Y. Senzaki, D. Roberts, D.L. Kwong, in: Proceedings of the Symposium on VLSI Technology, Kyoto, 2001, p. 133.

4. Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

5. Photoemission study ofSiOx(0≤x≤2) alloys

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