Density functional calculations of the strain effects on binding energies and adatom diffusion on (0001) GaN surfaces-Reference-Cited by-同舟云学术

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Density functional calculations of the strain effects on binding energies and adatom diffusion on (0001) GaN surfaces

Published:2009-02 Issue:1-3 Volume:158 Page:13-18
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Grandusky J.R.,Jindal V.,Raynolds J.E.,Guha S.,Shahedipour-Sandvik F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Nitride Semiconductors and Devices;Morkoç,1999

2. Defect density dependence of carrier dynamics in AlGaN multiple quantum wells grown on GaN substrates and templates

3. Effect of HVPE GaN Substrate Condition on the Characteristics and Performance of 405 nm LEDs

4. Electronic structure of1×1GaN(0001) andGaN(0001¯)surfaces

5. First-principles calculations of the structural and electronic properties of cleanGaN(0001)surfaces

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1. Joint effect of miscut r-plane sapphire substrate and different nucleation layers on structural characteristics of non-polar a-plane GaN films;CrystEngComm;2023

2. Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices;ACS Applied Nano Materials;2022-11-15

3. Multiscale Kinetic Monte Carlo Simulation of Self-Organized Growth of GaN/AlN Quantum Dots;Nanomaterials;2022-09-02

4. Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources;ACS Omega;2020-10-08

5. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

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