Investigation of the cross-sectional morphology of epitaxial Si nanowires grown by chemical vapor deposition for the fabrication of vertical devices-Reference-Cited by-同舟云学术

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Investigation of the cross-sectional morphology of epitaxial Si nanowires grown by chemical vapor deposition for the fabrication of vertical devices

Published:2022-07 Issue: Volume:281 Page:115748
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Wang I-Ta,Liu Ting-Ran,Liu Yu-Ling,Chen Cheng-Yu,Chang Chen^ORCID,Cheng Chien-Tai,Wen Cheng-Yen

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Vertical silicon-nanowire formation and gate-all-around MOSFET;Yang;IEEE Electron Device Lett.,2008

2. Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires;Larrieu;Solid-State Electron.,2017

3. Vapor-liquid-solid mechanism of single crystal growth;Wagner;Appl. Phys. Lett.,1964

4. Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure;Sato;Solid State Electron.,2011

5. Enhanced thermoelectric performance of rough silicon nanowires;Hochbaum;Nature,2008

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