Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique-Reference-Cited by-同舟云学术

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

Published:2003-12 Issue:1-3 Volume:105 Page:70-73
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Shmagin V.B,Kuznetsov V.P,Remizov D.Yu,Krasil’nik Z.F,Krasil’nikova L.V,Kryzhkov D.I

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

3. Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes

4. Room‐temperature electroluminescence from Er‐doped crystalline Si

5. Avalanche breakdown-related electroluminescence in single crystal Si:Er:O

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1. Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes;Materials Science and Engineering: B;2008-01

2. Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes;IEEE Journal of Selected Topics in Quantum Electronics;2006-11

3. A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes;Semiconductor Science and Technology;2006-09-08

4. Single- and multilayer Si:Er structures for LED and laser applications grown with sublimation MBE technique;SPIE Proceedings;2006-03-03

5. Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications;Journal of Materials Research;2006-03-01