A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes-Reference-Cited by-同舟云学术

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A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes

Published:2006-09-08 Issue:10 Volume:21 Page:1459-1463
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Obolensky S V,Shmagin V B,Kozlov V A,Kudryavtsev K E,Remizov D Yu,Krasilnik Z F

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Room‐temperature electroluminescence from Er‐doped crystalline Si

2. Avalanche breakdown-related electroluminescence in single crystal Si:Er:O

3. Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

4. Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions

5. The mechanisms of electronic excitation of rare earth impurities in semiconductors

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1. Pentacene and Er-Doped ZnO Nanocomposite Based UV-Visible-NIR Wideband Photodetector;IEEE Photonics Technology Letters;2021-11-01

2. Interactions between Er dopant and intrinsic point defects of ZnO: a first-principles study;Materials Research Express;2017-03-15

3. Electroluminescent 1.5-μm light-emitting diodes based on p +-Si/NC β-FeSi2/n-Si structures;Semiconductors;2015-04

4. Electroluminescence properties of p-Si/β-FeSi2NCs/…/n-Si mesa diodes with embedded multilayers ofβ-FeSi2nanocrystallites;physica status solidi (c);2013-11-18

5. Room temperature 1.5 μm light-emitting silicon diode with embedded β-FeSi2 nanocrystallites;Applied Physics Letters;2012-10-15

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