Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN

Author:

Braud A,Doualan J.L,Moncorge R,Pipeleers B,Vantomme A

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of Erbium doping on GaN electronic and optical properties: First-principles study;Modern Physics Letters B;2019-09-30

2. Photoluminescence quantum efficiency of Er optical centers in GaN epilayers;Scientific Reports;2017-01-05

3. Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD;MRS Advances;2017-01

4. Rare Earth doped GaN for photonic devices;Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS);2017

5. First-principles identification of defect levels in Er-doped GaN;physica status solidi (RRL) - Rapid Research Letters;2016-10-21

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