Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep39997.pdf
Reference38 articles.
1. Steckl, A. J., Park, J. H. & Zavada, J. M. Prospects for rare earth doped GaN lasers on Si. Mater Today 10, 20 (2007).
2. O’Donnell, K. & Dierolf, V. Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. (Springer, The Netherlands; 2010).
3. Vinh, N. Q., Ha, N. N. & Gregorkiewicz, T. Photonic Properties of Er-Doped Crystalline Silicon. P IEEE 97, 1269 (2009).
4. Miniscalco, W. J. Erbium-Doped Glasses for Fiber Amplifiers at 1500-nm. J Lightwave Technol 9, 234 (1991).
5. Steckl, A. J. & Zavada, J. M. Optoelectronic properties and applications of rare-earth-doped GaN. Mrs Bull 24, 33 (1999).
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