β-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications-Reference-Cited by-同舟云学术

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β-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications

Published:2005-12 Issue: Volume:124-125 Page:449-452
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ootsuka Teruhisa,Liu Zhengxin,Osamura Masato,Fukuzawa Yasuhiro,Otogawa Naotaka,Nakayama Yasuhiko,Tanoue Hisao,Makita Yunosuke

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Strain dependent gap nature of epitaxial β-FeSi2 in silicon by first principles calculations

2. Luminescent FeSi2 Crystal Structures Induced by Heteroepitaxial Stress on Si(111)

3. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

4. Electroluminescence and Response Characterization of β-FeSi2-Based Light-Emitting Diodes

5. Structural properties of ion‐beam‐synthesized β‐FeSi2in Si(111)

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3. The role of silane gas flow rate on PECVD-assisted fabrication of silicon nanowires;Applied Physics A;2016-02-23

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