Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition system
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties
2. Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition
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4. Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate
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