Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system-Reference-Cited by-同舟云学术

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Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system

Published:2006-02 Issue:1 Volume:127 Page:91-97
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Mastro M.A.,Kryliouk O.M.,Anderson T.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Gallium Nitride Processing for Electronics, Sensors and Spintronics (Engineering Materials and Processes);Pearton,2005

2. The Blue Laser Diode: The Complete Story;Nakamura,2000

3. Nitride Semiconductors and Devices (Springer Series in Materials Science);Morkoc,1999

4. The great gallium nitride gamble

5. RF performance of HVPE-grown AlGaN/GaN HEMTs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect-control electron transport behavior of gallium nitride/silicon nonplanar-structure heterojunction;Journal of Physics D: Applied Physics;2022-06-29

2. Nature of luminescence and strain in gallium nitride nanowires;Journal of Crystal Growth;2009-05

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