Nature of luminescence and strain in gallium nitride nanowires-Reference-Cited by-同舟云学术

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Nature of luminescence and strain in gallium nitride nanowires

Published:2009-05 Issue:10 Volume:311 Page:2982-2986
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mastro M.A.,Maximenko S.,Gowda M.,Simpkins B.S.,Pehrsson P.E.,Long J.P.,Makinen A.J.,Freitas J.A.,Hite J.K.,Eddy C.R.,Kim J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Rare-earth chloride seeded growth of GaN nano- and micro-crystals

2. Experimental study of plasmonically enhanced GaN nanowire light emitters

3. M.A. Mastro, J.A. Freitas, Charles R. Eddy, Fritz Kub Jr., J.-H. Ahn, H.-R. Kim, J. Kim, Physica E, 41 (2008) 487.

4. Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

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1. The GaN(0001) yellow-luminescence-related surface state and its interaction with air;Surfaces and Interfaces;2023-06

2. First-principles calculations for mechanical and electronic features of strained GaP nanowires;International Journal of Modern Physics C;2017-03

3. All-epitaxial fabrication of a nanowire plasmon laser structure;physica status solidi (c);2014-02

4. III-nitride nanowire based light emitting diodes on carbon paper;physica status solidi (c);2014-02

5. Nickel Foam as a Substrate for III-nitride Nanowire Growth;MRS Proceedings;2013

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