Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT-Reference-Cited by-同舟云学术

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Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

Published:2005-02 Issue:2 Volume:49 Page:251-256
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mastro M.A.,Eddy C.R.,Bassim N.D.,Twigg M.E.,Edwards A.,Henry R.L.,Holm R.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. GaN HBT: toward an RF device

2. Performance predictions for n-p-n Al/sub x/Ga/sub 1-x/N/GaN HBTs

3. Physics of semiconductor devices;Sze,1981

4. Wayne Johnson, Ph.D. Dissertation, University of Florida, 2001

5. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

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3. Nature of luminescence and strain in gallium nitride nanowires;Journal of Crystal Growth;2009-05

4. Characterization of 5 MeV proton-irradiated gallium nitride nanowires;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

5. Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates;MRS Proceedings;2008

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