The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. International Electron Device Meeting, IEEE;Mistry,2007
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4. Effect of stress on dopant and defect diffusion in Si: A general treatment
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