Power devices in Polish National Silicon Carbide Program-Reference-Cited by-同舟云学术

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Power devices in Polish National Silicon Carbide Program

Published:2009-11 Issue:1-2 Volume:165 Page:18-22
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kubiak A.,Sochacki M.,Lisik Z.,Szmidt J.,Konczakowska A.,Barlik R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. A. Kubiak, A. Kalinowski, Doping in SiC by high-temperature diffusion processes, EXMATEC’08, Łódź 1-4.VI.08, ss.63.

2. Oxidation process of SiC by RTP technique;Kwietniewski;Materials Science Forum,2009

3. „Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC;Kwietniewski;Applied Surface Science,2008

4. Silicon carbide application issues;Konczakowska,2007

5. Investigations of transistor IGBT and silicon carbide Schottky diode switch;Barlik,2007

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Transition Metal Compounds on Amorphous SiC Removal Rates;ECS Journal of Solid State Science and Technology;2014

2. Synthesis of β-SiC Powder from Bamboo Leaf in a DC Extended Thermal Plasma Reactor;Materials and Manufacturing Processes;2011-11

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