Effect of Transition Metal Compounds on Amorphous SiC Removal Rates
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference60 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. State of the art of high temperature power electronics
3. Lubrication of polycrystalline silicon MEMS via a thin silicon carbide coating
4. Ordered mesoporous silicon carbide-derived carbon for high-power supercapacitors
5. Passivating Properties of Hydrogenated Amorphous Silicon Carbide Deposited by PECVD Technique for Photovoltaic Applications
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Defect-Engineered MnO2 as Catalyst for the Chemical Mechanical Polishing of Silicon Carbide Wafer;ECS Journal of Solid State Science and Technology;2023-07-01
2. Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad;Crystals;2023-05-26
3. Mechanistic difference between Si-face and C-face polishing of 4H–SiC substrates in aqueous and non-aqueous slurries;Ceramics International;2023-03
4. Chemically grafted polyurethane/graphene ternary slurry for advanced chemical–mechanical polishing of single-crystalline SiC wafers;The International Journal of Advanced Manufacturing Technology;2022-04-22
5. Polishing of SiC films;Advances in Chemical Mechanical Planarization (CMP);2022
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3