Affiliation:
1. Institute of Electron Technology
2. Warsaw University of Technology
Abstract
The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal oxide was determined by spectroscopic ellipsometry and confirmed by electrical measurements. The conductance method was applied to analyse the surface states parameters. The lifetime, density and cross-section of the surface traps were extracted for as-fabricated MOS capacitors and after thermal annealing processes.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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