Phosphorous clustering in germanium-rich silicon germanium
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference38 articles.
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4. MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
5. Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures
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