Effect of composition on vacancy mediated diffusion in random binary alloys: First principles study of the Si1−xGex system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1578695
Reference44 articles.
1. UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications
2. Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers
3. X‐ray reflectometry study of interdiffusion in Si/Ge heterostructures
4. Thermal relaxation of pseudomorphic Si‐Ge superlattices by enhanced diffusion and dislocation multiplication
5. Effects of stress on interdiffusion in Si1−xGex/Si superlattices
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