Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals-Reference-Cited by-同舟云学术

Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals

Published:2021-09 Issue: Volume:271 Page:115281
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ailihumaer Tuerxun,Peng Hongyu,Fujie Fumihiro,Raghothamachar Balaji,Dudley Michael,Harada Shunta,Ujihara Toru

Funder

Office of Science

Argonne National Laboratory

U.S. Department of Energy

St. Bonaventure University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance

2. Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability

3. Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

4. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

5. The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

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3. Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers;Defect and Diffusion Forum;2023-06-06

4. Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers;Materials Science Forum;2022-05-31