Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies-Reference-Cited by-同舟云学术

Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies

Published:2005-04 Issue:1-3 Volume:118 Page:105-111
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Dubourdieu C.,Roussel H.,Jimenez C.,Audier M.,Sénateur J.P.,Lhostis S.,Auvray L.,Ducroquet F.,O'Sullivan B.J.,Hurley P.K.,Rushworth S.,Hubert-Pfalzgraf L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High-Tcsuperconductivity: New applications of ferroelectrics at microwave frequencies

3. High dielectric constant and tunability of epitaxial SrTiO3 thin film capacitors

4. (Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM

5. Crystalline Oxides on Silicon: The First Five Monolayers

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