(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM-Reference-Cited by-同舟云学术

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(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM

Published:1999-05 Issue:3 Volume:43 Page:367-382
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Kotecki D. E.,Baniecki J. D.,Shen H.,Laibowitz R. B.,Saenger K. L.,Lian J. J.,Shaw T. M.,Athavale S. D.,Cabral C.,Duncombe P. R.,Gutsche M.,Kunkel G.,Park Y.-J.,Wang Y.-Y.,Wise R.

Publisher

IBM

Subject

General Computer Science

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