Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell-Reference-Cited by-同舟云学术

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Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell

Published:2015-03 Issue: Volume:193 Page:160-163
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Cho Young Joon,Song Hee Eun,Chang Hyo Sik

Funder

Korea Institute of Energy Technology Evaluation and Planning

Korean Government Ministry of Trade, Industry and Energy

Chungnam National University

Korea Institute of Energy Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

2. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

3. Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

4. Silicon surface passivation by atomic layer deposited Al2O3

5. The fabrication of front electrodes of Si solar cell by dispensing printing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Passivation properties of HfO2-SiO2 mixed metal oxide thin films with low reflectivity on silicon substrates for semiconductor devices;Thin Solid Films;2021-11

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