Ion-implanted polysilicon diffusion sources
Author:
Publisher
Elsevier BV
Subject
General Engineering
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1. Interface evolution and epitaxial realignment in polycrystal/single crystal Si structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03
2. Discontinuity of B‐diffusion profiles at the interface of polycrystalline Si and single crystal Si;Journal of Applied Physics;1993-04-15
3. Electrical characterization of polycrystalline silicon films on Si substrates processed by rapid thermal annealing;Semiconductor Science and Technology;1993-03-01
4. Structural characterization of the epitaxial realignment of polycrystalline silicon films;Materials Chemistry and Physics;1992-07
5. Two-dimensional model of impurity diffusion in polysilicon-silicon structures;Solid-State Electronics;1992-02
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