Discontinuity of B‐diffusion profiles at the interface of polycrystalline Si and single crystal Si-Reference-Cited by-同舟云学术

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Discontinuity of B‐diffusion profiles at the interface of polycrystalline Si and single crystal Si

Published:1993-04-15 Issue:8 Volume:73 Page:3800-3804
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Batra S.,Manning M.,Dennison C.,Sultan A.,Bhattacharya S.,Park K.,Banerjee S.,Lobo M.,Lux G.,Kirschbaum C.,Norberg J.,Smith T.,Mulvaney B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.352886

Reference15 articles.

1. Shallow junction formation by dopant diffusion frominsitudoped polycrystalline silicon chemically vapor deposited in a rapid thermal processor

2. Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors

3. Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometry

4. Hydrogenation of transistors fabricated in polycrystalline-silicon films

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1. Effect of Crystallographic Orientation and Nanoscale Surface Morphology on Poly-Si/SiOx Contacts for Silicon Solar Cells;ACS Applied Materials & Interfaces;2019-10-15

2. Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells;Journal of Materials Research;2016-03-23

3. Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing;Physics Procedia;2014

4. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers;Crystal Research and Technology;2012-07-30

5. Modelling boron diffusion in heavily implanted low-pressure chemical vapor deposited silicon thin films during thermal post-implantation annealing;Thin Solid Films;2009-01

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