Decomposition kinetics of supersaturated solid solutions in ion implanted silicon
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference9 articles.
1. Incorporation of implanted In and Sb in silicon during amorphous layer regrowth
2. Supersaturated solid solutions after solid phase epitaxial growth in Bi‐implanted silicon
3. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
4. Solute trapping by moving interface in ion‐implanted silicon
5. J. Narayan and O.W. Holland, Phys. Stat. Sol., in press.
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of semiconductor processing by 119Sn conversion electron Mössbauer spectroscopy;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1989-08
2. A channelling and conversion electron Mossbauer spectroscopy study of annealing behaviour of tin implanted silicon;Semiconductor Science and Technology;1986-10-01
3. Impurity Incorporation During Si Ultrafast Solidification to the Crystalline and Amorphous Phase;MRS Proceedings;1984
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