Deep levels in arsenic implanted silicon-Reference-Cited by-同舟云学术

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Deep levels in arsenic implanted silicon

Published:1983-05 Issue: Volume:209-210 Page:437-440
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Krynicki J.,Bourgoin J.C.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Laser and Electron Beam Processing of Materials;Kimerling,1980

2. A. Blosse and J.C. Bourgoin, Proc. 1982 Materials Research Society Meeting, to be published.

3. Inst. Phys. Conf. Ser. No. 59;Blosse,1981

4. Inst. Phys. Conf. Ser. No. 46;Krynicki,1979

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electrical damage induced by high‐energy heavy ions in SiO2/Si structures;Journal of Applied Physics;1992-03-15

2. Defects created by 3.5 GeV xenon ions in silicon;Applied Surface Science;1989-12

3. Ionization Assisted Transformations of Defects in Carbon Implanted Silicon;Physica Status Solidi (a);1989-03-16

4. Electronic properties of defects created by 1.6 GeV argon ions in silicon;Materials Science and Engineering: B;1989-02

5. Deep electronic levels in carbon-implanted silicon;Physica Status Solidi (a);1988-10-16

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