Mechanism of emission of Si I, Si II, and Si III from Si which is ion-bombarded in the presence of oxygen-Reference-Cited by-同舟云学术

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Mechanism of emission of Si I, Si II, and Si III from Si which is ion-bombarded in the presence of oxygen

Published:1983-05 Issue: Volume:209-210 Page:509-512
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Kelly Roger

Publisher

Elsevier BV

Subject

General Engineering

Reference18 articles.

1. A study of the feasibility of a surface plasma influencing secondary ion and photon emission under medium-energy ion bombardment ∗

2. On the problem of whether excited states amongst sputtered particles are of thermal origin

3. Inelastic particle-surface collisions;Kelly,1981

4. Statistical model for the formation of excited atoms in the sputtering process

5. On the kinetic energies of sputtered excited particles

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of type of bonds in compounds on the mechanism of the sputtered excited particles formation under ion bombardment;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2016-11

2. Application of pattern recognition methods in secondary ion mass spectrometry;Mikrochimica Acta;1986-01

3. Experimental evidence for the absence of local thermal equilibrium in chemical sputtering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03

4. Examination of the LTE model for the sputtering process with spectroscopy of ion induced photons (SIIP);Surface Science;1983-12

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