High selectivity Inductively Coupled Plasma etching of GaAs over InGaP-Reference-Cited by-同舟云学术

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High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

Published:2000-02 Issue:1-4 Volume:156 Page:76-84
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hays D.C,Cho H,Lee J.W,Devre M.W,Reelfs B.H,Johnson D,Sasserath J.N,Meyer L.C,Toussaint E,Ren F,Abernathy C.R,Pearton S.J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Gas source molecular beam epitaxial growth and device applications in In0.5Ga0.5P and In0.5Al0.5P heterostructures

2. Gas-source molecular-beam epitaxy growth of InxGa1−x−yAlyP

3. Temperature dependence of InGaP, InAlP, and AlGaP growth in metalorganic molecular-beam epitaxy

4. Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures

5. Cryogenic and high temperature operation of Al0.52In0.48P/In0.2Ga0.8As high electron mobility transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective anisotropic etching of GaN over AlGaN for very thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-05

2. A practical approach to reactive ion etching;Journal of Physics D: Applied Physics;2014-05-09

3. Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films;Thin Solid Films;2013-11

4. Improved spectral characteristics of 980 nm broad area slotted Fabry—Perot diode lasers;Journal of Semiconductors;2012-01

5. Dry Etching of PMMA and Polycarbonate in a Diffusion Pump-based Capacitively Coupled O2Plasma;Korean Journal of Materials Research;2009-08-27

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