Author:
Therrien R,Lucovsky G,Davis R
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference8 articles.
1. Low interface trap density for remote plasma deposited SiO2 on n‐type GaN
2. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
3. S.C. Binari, L.B. Rowland, G. Kelner, W. Kruppa, H.B. Dietrich, K. Doverspike, D.K. Gaskill, Proc. 21st Int. Symp. on Compound Semicond., San Diego, CA, Aug. 1994.
4. Dielectrics for GaN Based MIS-Diodes
5. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
Cited by
51 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献