GaN thin film fabrication by reaction of laser evaporated Ga and GaAs in NH3 atmosphere-Reference-Cited by-同舟云学术

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GaN thin film fabrication by reaction of laser evaporated Ga and GaAs in NH3 atmosphere

Published:1998-05 Issue: Volume:127-129 Page:350-354
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Di Palma Tonia M,Teghil Roberto,Marotta Veronica,Giardini Guidoni Anna,Mele Aldo,He M.Q,Chen N.Q,Zhou P.Z,Okabe Hideo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. GaN, AlN, and InN: A review

2. III-V nitrides for electronic and optoelectronic applications

3. On the Preparation of the Nitrides of Aluminum and Gallium

4. Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adsorption Configuration and Dissociative Reaction of NH3 on Anatase (101) Surface with and without Hydroxyl Groups;The Journal of Physical Chemistry C;2009-03-26

2. Fabrication of Ga-templates Using a Focused Ion Beam;MRS Proceedings;2009

3. Anna Giardini's journey from atoms to biomolecules;Physica Scripta;2008-11-01

4. Adsorption and reactions of HN3 on Si(100)-2×1: A computational study;Surface Science;2006-03

5. Adsorption and reaction of N2H4 on Si(100)-2×1: A computational study with single- and double-dimer cluster models;Surface Science;2005-04

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