Scanning capacitance microscopy investigations of buried heterostructure laser structures-Reference-Cited by-同舟云学术

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Scanning capacitance microscopy investigations of buried heterostructure laser structures

Published:1999-04 Issue: Volume:144-145 Page:137-140
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bowallius O,Anand S,Hammar M,Nilsson S,Landgren G

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Quantitative two‐dimensional dopant profiling of abrupt dopant profiles by cross‐sectional scanning capacitance microscopy

2. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon

3. Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices

4. Nanometer‐scale characterization of SiO2/Si with a scanning capacitance microscope

5. 74 nm wavelength tuning range of an InGaAsP/InP vertical grating assisted codirectional coupler laser with rear sampled grating reflector

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1. Cross-sectional mapping of hole concentrations as a function of copper treatment in CdTe photo-voltaic devices;Progress in Photovoltaics: Research and Applications;2014-12-19

2. Advances in AFM for the electrical characterization of semiconductors;Reports on Progress in Physics;2008-06-20

3. Capacitive Probe Microscopy;Encyclopedia of Imaging Science and Technology;2002-01-15

4. Metal–insulator–semiconductor tunneling microscope: two-dimensional dopant profiling of semiconductors with conducting atomic-force microscopy;Applied Physics Letters;2000-07-17

5. Another dimension in device characterization;IEEE Circuits and Devices Magazine;2000-03

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