Metal–insulator–semiconductor tunneling microscope: two-dimensional dopant profiling of semiconductors with conducting atomic-force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.127008
Reference11 articles.
1. Delineation of semiconductor doping by scanning resistance microscopy
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3. Scanning capacitance microscopy investigations of buried heterostructure laser structures
4. Scanning Capacitance Microscopy for Two-Dimensional Doping Profiling in Si- and InP-Based Device Structures
5. Scanning Capacitance Microscopy of Dopants in III-V Semiconductors
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