Interfacial reactions of Gd thin films on (111) and (001)Si
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference16 articles.
1. The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon
2. The effect of an interfacial oxide layer on the Schottky barrier height of Er‐Si contact
3. Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers
4. An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate
5. Interfacial reactions in ultrahigh vacuum deposited Y‐Si multilayer thin films
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1. Photoelectron Emission from Si–Gd–O Cathode;Ukrainian Journal of Physics;2016-04
2. Interaction of Oxygen and Gadolinium with Si(100)-2x1 Surface. Formation of a System with 1-eV Work Function;Ukrainian Journal of Physics;2015-02
3. On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films;Journal of Alloys and Compounds;2014-10
4. AC conductivity and dielectric properties of SiO2–Na2O–B2O3–Gd2O3 glasses;Journal of Alloys and Compounds;2013-12
5. Gadolinium oxide high-k gate dielectrics prepared by anodic oxidation;Applied Surface Science;2008-06
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