Effects of cobalt thin films on the a-Si crystallisation induced by excimer laser irradiation-Reference-Cited by-同舟云学术

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Effects of cobalt thin films on the a-Si crystallisation induced by excimer laser irradiation

Published:1999-01 Issue: Volume:138-139 Page:145-149
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mengucci P,Barucca G,D'Anna E,Jergel M,Luby S,Majkova E,Martino M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. Polycrystalline silicon thin film transistors

2. Mode of growth and microstructure of polycrystalline silicon obtained by solid‐phase crystallization of an amorphous silicon film

3. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films

4. Excimer‐laser‐induced crystallization of hydrogenated amorphous silicon

5. Sulfurization of SiO2surface for polycrystalline silicon growth on SiO2/Si structure at 250 °C

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallization of sputtered amorphous silicon induced by silver–copper alloy with high crystalline volumeratio;Journal of Crystal Growth;2010-12

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